KMZ10B,112 查看數據表（PDF） - Philips Electronics

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KMZ10B,112

Magnetic field sensor

Philips Electronics 

Philips Semiconductors

Magnetic field sensor

Product specification

KMZ10B

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

VALUE

180

UNIT

K/W

CHARACTERISTICS

Tamb = 25 °C; Hx = 3 kA/m; note 1.

SYMBOL

PARAMETER

VCC

bridge supply voltage

Hy

magnetic field strength

S

sensitivity

CONDITIONS

MIN.

−

−2

open circuit, notes 2 and 3 3.2

TCVO

temperature coefficient of

output voltage

Rbridge

bridge resistance

TCRbridge temperature coefficient of

bridge resistance

Voffset

offset voltage

TCVoffset offset voltage drift

VCC = 5 V;

Tj = −25 to +125 °C

IB = 3 mA;

Tj = −25 to +125 °C

Tbridge = −25 to +125 °C

Tj = −25 to +125 °C

−

−

1.6

−

−1.5

−3

FL

linearity deviation of output Hy = 0 to ±1 kA/m

−

voltage

Hy = 0 to ±1.6 kA/m

−

Hy = 0 to ±2 kA/m

−

FH

hysteresis of output voltage

−

f

operating frequency

0

TYP.

5

−

−

−0.4

−0.1

−

0.3

−

−

−

−

−

−

−

MAX.

−

+2

4.8

−

UNIT

V

kA/m

m-k---A--V----⁄-⁄--m-V--

%/K

−

%/K

2.6

kΩ

−

%/K

+1.5

mV/V

+3

µ----V--K----⁄--V---

±0.5

%⋅FS

±1.7

%⋅FS

±2

%⋅FS

0.5

%⋅FS

1

MHz

Notes

1. In applications with Hx < 3 kA/m the sensor has to be reset before first operation by application of an auxiliary field

Hx = 3 kA/m.

2. No disturbing field (Hd) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for

decrease of sensitivity.

3. S = --(--V----O------a----t---H-----y----=------1---.--6---1--k-.--6A-----×-⁄--m--V----)C----C–------(--V-----O-----a----t---H-----y----=------0---)- .

1998 Mar 31

4

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