KSC1187 查看數據表（PDF） - Fairchild Semiconductor

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KSC1187

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSC1187

TV 1st, 2nd Picture IF Amplifier

(Forward AGC)

• High Current Gain Bandwidth Product : fT=700MHz

• High Power Gain : GPE=24dB (TYP.) at f=45MHz

1

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Ratings

30

20

4

30

250

150

-55 ~ 150

Units

V

V

V

mA

mW

°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

BVEBO

ICBO

hFE

fT

CRE

GPE

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

DC Current Gain

Current Gain Bandwidth Product

Reverse Transfer Capacitance

Power Gain

IC=10µA, IE=0

IC=5mA, IB=0

IE=10µA, IC=0

VCB=20V, IE=0

VCE=10V, IC=2mA

VCE=10V, IC=3mA

VCB=10V, IE=0, f=1MHz

VCE=10V, IC=3mA

f=45MHz

VAGC

AGC Voltage

GR= 30dB, f=45MHz

Min.

30

25

4

40

400

20

4.4

Typ.

700

0.6

24

5.2

Max.

0.1

240

Units

V

V

V

µA

MHz

pF

dB

6.0

V

hFE Classification

Classification

hFE

R

40 ~ 80

O

70 ~ 140

Y

120 ~ 240

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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