EGP50A 查看數據表（PDF） - Vishay Semiconductors
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EGP50A Datasheet PDF : 4 Pages
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EGP50A thru EGP50G
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
Patented*
*Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly to
Patent No. 3,930,306
®
GP20
FEATURES
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
VF
TJ max.
5.0 A
50 V to 400 V
150 A
50 ns
0.95 V, 1.25 V
150 °C
TYPICAL APPLICATIONS
For use in high frequency rectification and
freewheeling application in switching mode converters
and inverters for consumer, computer and
telecommunication.
MECHANICAL DATA
Case: GP20, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G
Maximum repetitive peak reverse voltage
VRRM
50
Maximum RMS voltage
VRMS
35
Maximum DC blocking voltage
VDC
50
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TL = 55 °C
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
100
150
200
300
400
70
105
140
210
280
100
150
200
300
400
5
150
Operating and storage temperature range
TJ, TSTG
- 65 to + 150
UNIT
V
V
V
A
A
°C
Document Number: 88585 For technical questions within your region, please contact one of the following:
Revision: 20-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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