EGP50A 查看數據表（PDF） - Vishay Semiconductors
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EGP50A Datasheet PDF : 4 Pages
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EGP50A thru EGP50G
Vishay General Semiconductor
100
Pulse Width = 300 µs
1 % Duty Cycle
10 TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.2
EGP50A - EGP50D
EGP50F & EGP50G
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
210
TJ = 25 °C
180
f = 1.0 MHz
Vsig = 50 mVp-p
150
120
90
60
30
0
0.1
EGP50A - EGP50D
EGP50F & EGP50G
1
10
100
Reverse Voltage (V)
1000
Figure 5. Typical Junction Capacitance
100
10
1
0.1
0.01
TJ = 150 °C
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
GP20
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.042 (1.07)
0.037 (0.94)
DIA.
1.0 (25.4)
MIN.
Document Number: 88585 For technical questions within your region, please contact one of the following:
Revision: 20-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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