IDT70T651S008BFI 查看數據表（PDF） - Integrated Device Technology

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IDT70T651S008BFI

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Integrated Device Technology 

IDT70T651/9S

High-Speed 2.5V 256/128K x 36 Asynchronous Dual-Port Static RAM

Preliminary

Industrial and Commercial Temperature Ranges

Description

The IDT70T651/9 is a high-speed 256/128K x 36 Asynchronous

Dual-Port Static RAM. The IDT70T651/9 is designed to be used as a

stand-alone 9216/4608K-bit Dual-Port RAM or as a combination MAS-

TER/SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the

IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider

memory system applications results in full-speed, error-free operation

without the need for additional discrete logic.

This device provides two independent ports with separate control,

address, and I/O pins that permit independent, asynchronous access for

reads or writes to any location in memory. An automatic power down

feature controlled by the chip enables (either CE0 or CE1) permit the

on-chip circuitry of each port to enter a very low standby power mode.

The IDT70T651/9 has a RapidWrite Mode which allows the designer

to perform back-to-back write operations without pulsing the R/W input

each cycle. This is especially significant at the 8 and 10ns cycle times of

the IDT70T651/9, easing design considerations at these high perfor-

mance levels.

The 70T651/9 can support an operating voltage of either 3.3V or 2.5V

on one or both ports, controlled by the OPT pins. The power supply for

the core of the device (VDD) is at 2.5V.

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