APT50M50L2FLL
500V 89A 0.050Ω
POWER MOS 7 R FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Qg. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
RDS(ON)
losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg • Popular TO-264 MAX Package
• FAST RECOVERY BODY DIODE
TO-264
Max
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT50M50L2LL
UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
500
Volts
89
Amps
356
±30
Volts
±40
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
893
7.14
Watts
W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
89
50
3200
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 44.5A)
IDSS
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
3
Volts
0.050 Ohms
250
µA
1000
±100 nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com