IDT707288S25G 查看數據表（PDF） - Integrated Device Technology
零件编号
产品描述 (功能)
生产厂家
IDT707288S25G
Integrated Device Technology
IDT707288S25G Datasheet PDF : 16 Pages
| |||
IDT707288S/L
High-Speed 64K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(5)
707288X15
Com'l Only
707288X20
Com'l & Ind
707288X25
Com'l & Ind
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Unit
WRITE CYCLE
tWC
Write Cycle Time
15
____
20
____
25
____
ns
tEW
Chip Enable to End-of-Write(3)
12
____
15
____
20
____
ns
tAW
Address Valid to End-of-Write
12
____
15
____
20
____
ns
tAS
Address Set-up Time(3)
0
____
0
____
0
____
ns
tBS
Bank Set-up Time
0
____
0
____
0
____
ns
tWP
Write Pulse Width
12
____
15
____
20
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
15
____
15
____
20
____
ns
tHZ
Output High-Z Time(1,2)
____
8
____
9
____
10
ns
tDH
Data Hold Time(4)
0
____
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
8
____
9
____
10
ns
tOW
Output Active from End-of-Write(1,2,4)
3
____
3
____
3
____
ns
tMWRD
Mailbox Write to Read Time
5
____
5
____
5
____
ns
NOTES:
3592 tbl 15
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = VIL and MBSEL = VIH. To access mailbox, CE = VIH and MBSEL = VIL. Either condition must be valid for the entire tEW time.
Refer to Truth Tables I and III.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
5. 'X' in part numbers indicates power rating (S or L).
61.412
Share Link: