IDT7025S17FGB8(2012) 查看數據表（PDF） - Integrated Device Technology

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IDT7025S17FGB8
(Rev.:2012)

HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM

Integrated Device Technology 

IDT7025S/L

High-Speed 8K x 16 Dual-Port Static RAM

Military, Industrial and Commercial Temperature Ranges

Data Retention Characteristics Over All Temperature Ranges

(L Version Only)

Symbol

Parameter

Test Condition

Min.

Typ.(1)

Max. Unit

VDR

VCC for Data Retention

VCC = 2V

2.0

___

___

V

ICCDR

Data Retention Current

CE > VHC

MIL. & IND.

___

100

4000 µA

VIN > VHC or < VLC

COM'L.

___

100

1500

tCDR(3)

Chip Dese lect to Data Retention Time

SEM > VHC

0

___

___

ns

tR(3)

Operation Recovery Time

tRC(2)

___

___

ns

NOTES:

1. TA = +25°C, VCC = 2V, and are not production tested.

2. tRC = Read Cycle Time

3. This parameter is guaranteed by device characterization, but is not production tested.

4. At Vcc < 2.0V input leakages are undefined.

2683 tbl 10

Data Retention Waveform

DATA RETENTION MODE

VCC

4.5V

VDR ≥ 2V

tCDR

VDR

CE

VIH

4.5V

tR

VIH

AC Test Conditions

Input Pulse Levels

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

Output Load

GND to 3.0V

5ns Max.

1.5V

1.5V

Figures 1 and 2

2683 tbl 11

DATAOUT

BUSY

INT

347Ω

5V

893Ω

30pF

DATAOUT

347Ω

5V

893Ω

5pF*

2683 drw 05

Figure 1. AC Output Test Load

2683 drw 06

Figure 2. Output Test Load

(for tLZ, tHZ, tWZ, tOW)

* including scope and jig.

6.482

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