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IDT7015S17PF(1996) 查看數據表(PDF) - Integrated Device Technology

零件编号
产品描述 (功能)
生产厂家
IDT7015S17PF
(Rev.:1996)
IDT
Integrated Device Technology IDT
IDT7015S17PF Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IDT7015S/L
HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(4)
Symbol
Parameter
IDT7015X12
Com'l. Only
Min. Max.
READ CYCLE
tRC
Read Cycle Time
12
tAA
Address Access Time
tACE
Chip Enable Access Time(3)
12
12
tAOE
Output Enable Access Time
8
tOH
Output Hold from Address Change
tLZ
Output Low-Z Time(1, 2)
tHZ
Output High-Z Time(1, 2)
tPU
Chip Enable to Power Up Time(2)
tPD
Chip Disable to Power Down Time(2)
3
3
10
0
12
tSOP
Semaphore Flag Update Pulse (OE or SEM)
10
tSAA
Semaphore Address Access Time
12
IDT7015X15
Com'l. Only
Min. Max.
15
15
15
10
3
3
10
0
15
10
15
IDT7015X17
Com'l. Only
Min. Max. Unit
17
— ns
17 ns
17 ns
10 ns
3
— ns
3
— ns
10 ns
0
— ns
17 ns
10
— ns
17 ns
IDT7015X20 IDT7015X25 IDT7015X35
Symbol
Parameter
Min. Max. Min.
READ CYCLE
tRC
Read Cycle Time
20
25
tAA
Address Access Time
tACE
Chip Enable Access Time(3)
20
20
tAOE
Output Enable Access Time
12
tOH
Output Hold from Address Change
tLZ
Output Low-Z Time(1, 2)
tHZ
Output High-Z Time(1, 2)
tPU
Chip Enable to Power Up Time(2)
tPD
Chip Disable to Power Down Time(2)
3
3
3
3
12
0
0
20
tSOP
Semaphore Flag Update Pulse (OE or SEM)
10
10
tSAA
Semaphore Address Access Time
20
NOTES:
1. Transition is measured ±200mV from Low- or High-impedance voltage with the Output test load (Figure 2).
2. This parameter is guaranteed by device characterization but not tested.
3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL.
4. "X" in part numbers indicates power rating (S or L).
Max.
25
25
13
15
25
25
Min.
35
3
3
0
15
Max. Unit
— ns
35 ns
35 ns
20 ns
— ns
— ns
20 ns
— ns
35 ns
— ns
35 ns
2954 tbl 11
6.12
7

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