1PS226 查看數據表（PDF） - Philips Electronics
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1PS226 Datasheet PDF : 6 Pages
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Philips Semiconductors
High-speed double diode
Product specification
1PS226
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
Vfr
forward recovery voltage
CONDITIONS
TYP. MAX. UNIT
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
610
− mV
740
− mV
−
1.0 V
IF = 100 mA
−
1.2 V
see Fig.4
VR = 25 V
−
30 nA
VR = 80 V
VR = 25 V; Tj = 150 °C
VR = 80 V; Tj = 150 °C
−
0.5 µA
−
30 µA
−
100 µA
f = 1 MHz; VR = 0; see Fig.5
−
when switched from IF = 10 mA to
−
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.6
1.5 pF
4 ns
when switched from IF = 10 mA;
−
tr = 20 ns; see Fig.7
1.75 V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE
250
500
UNIT
K/W
K/W
1996 Sep 03
3
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