AS4C4M4F0 查看數據表（PDF） - Alliance Semiconductor

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AS4C4M4F0

5V 4M×4 CMOS DRAM (Fast Page mode)

Alliance Semiconductor 

AS4C4M4F0

AS4C4M4F1

®

Absolute maximum ratings

Parameter

Input voltage

Input voltage (DQs)

Power supply voltage

Storage temperature (plastic)

Soldering temperature × time

Power dissipation

Short circuit output current

Symbol

Min

Vin

-1.0

VDQ

-1.0

VCC

-1.0

TSTG

-55

TSOLDER

–

PD

–

Iout

–

Max

+7.0

VCC + 0.5

+7.0

+150

260 × 10

1

50

Unit

V

V

V

°C

oC × sec

W

mA

DC electrical characteristics

Parameter

Symbol Test conditions

Input leakage current IIL

0V ≤ Vin ≤ +5.5V,

Pins not under test = 0V

Output leakage current IOL

Operating power

supply current

ICC1

DOUT disabled, 0V ≤ Vout ≤ +5.5V

RAS, CAS Address cycling; tRC=min

TTL standby power

supply current

ICC2

RAS = CAS ≥ VIH

Average power supply

current, RAS refresh

ICC3

mode or CBR

RAS cycling, CAS ≥ VIH,

tRC = min of RAS low after XCAS low.

Fast page mode average

power supply current

ICC4

CMOS standby power

supply current

ICC5

RAS = VIL, CAS,

address cycling: tHPC = min

RAS = CAS = VCC - 0.2V

Output voltage

VOH

VOL

CAS before RAS refresh

current

ICC6

IOUT = -5.0 mA

IOUT = 4.2 mA

RAS, CAS cycling, tRC = min

Self refresh current

RAS = UCAS = LCAS ≤ 0.2V,

ICC7

WE = OE ≥ VCC - 0.2V,

all other inputs at 0.2V or

VCC - 0.2V

-50

-60

Min Max Min Max Unit Notes

-5 +5 -5 +5 µA

-5 +5 -5 +5 µA

– 135 – 120 mA 1,2

– 2.0 – 2.0 mA

– 120 – 110 mA 1

– 130 – 120 mA 1, 2

– 1.0 – 1.0 mA

2.4 – 2.4 – V

– 0.4 – 0.4 V

– 120 – 110 mA

– 0.6 – 0.6 mA

4/11/01; v.0.9

Alliance Semiconductor

P. 4 of 18

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