SKM50GB12V(2009) 查看數據表（PDF） - Semikron
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SKM50GB12V Datasheet PDF : 3 Pages
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SKM50GB12V
SEMITRANS® 2
SKM50GB12V
Target Data
Features
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 50 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
IF = 50 A
Tj = 150 °C
di/dtoff = 1380 A/µs
VGE = ±15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
Ms
Mt
per module
to heat sink M6
to terminals M5
w
min.
typ.
max. Unit
2.2
2.5
V
2.2
2.5
V
1.3
1.5
V
0.9
1.1
V
18.4
20.8 mΩ
25.6
28.0 mΩ
35
A
8.7
µC
3.6
mJ
0.84 K/W
30
nH
0.65
mΩ
1
mΩ
0.04
0.05 K/W
3
5
Nm
2.5
5
Nm
Nm
160
g
GB
2
Rev. 0 – 23.12.2009
© by SEMIKRON
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