SKM50GB12V 查看數據表（PDF） - Semikron
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SKM50GB12V Datasheet PDF : 6 Pages
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SKM50GB12V
SEMITRANS® 2
SKM50GB12V
Target Data
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Insulated copper baseplate using DBC
technology (Direct Copper Bonding)
• Increased power cycling capability
• With integrated gate resistor
• UL recognized, file no. E63532
• Lowest switching losses at High di/dt
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Remarks
• Case temperature limited to Tc = 125°C
max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid for Tj =
150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES
tpsc
Tj
VCC = 720 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
IC = 50 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 1.7 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 50 A
VGE = +15/-15 V
RG on = 13 Ω
RG off = 13 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Eoff
Tj = 150 °C
Rth(j-c)
per IGBT
Values
1200
77
59
50
150
-20 ... 20
10
-40 ... 175
65
49
50
150
270
-40 ... 175
200
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.84
2.29
V
2.18
2.63
V
0.94
1.04
V
0.88
0.98
V
18
25
mΩ
26
33
mΩ
5.5
6
6.5
V
0.3
mA
-
mA
3.0
nF
0.30
nF
0.30
nF
550
nC
4.0
Ω
276
ns
35
ns
4.9
mJ
403
ns
62
ns
4.5
mJ
0.53 K/W
GB
© by SEMIKRON
Rev. 0.1 – 15.07.2016
1
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