BSM100GB60DLC 查看數據表（PDF） - Infineon Technologies

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BSM100GB60DLC

IGBT Modules 600V 100A DUAL

Infineon Technologies 

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

BSM 100 GB 60 DLC

Charakteristische Werte / Characteristic values

Transistor / Transistor

Einschaltverzögerungszeit (ind. Last)

turn on delay time (inductive load)

Anstiegszeit (induktive Last)

rise time (inductive load)

Abschaltverzögerungszeit (ind. Last)

turn off delay time (inductive load)

Fallzeit (induktive Last)

fall time (inductive load)

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

Kurzschlußverhalten

SC Data

Modulinduktivität

stray inductance module

IC= 100A, VCC= 300V

VGE= ±15V, RG= 2,2Ω, Tvj= 25°C

VGE= ±15V, RG= 2,2Ω, Tvj= 125°C

IC= 100A, VCC= 300V

VGE= ±15V, RG= 2,2Ω, Tvj= 25°C

VGE= ±15V, RG= 2,2Ω, Tvj= 125°C

IC= 100A, VCC= 300V

VGE= ±15V, RG= 2,2Ω, Tvj= 25°C

VGE= ±15V, RG= 2,2Ω, Tvj= 125°C

IC= 100A, VCC= 300V

VGE= ±15V, RG= 2,2Ω, Tvj= 25°C

VGE= ±15V, RG= 2,2Ω, Tvj= 125°C

IC= 100A, VCC= 300V, VGE= 15V

RG= 2,2Ω, Tvj= 125°C, Lσ= 15nH

IC= 100A, VCC= 300V, VGE= 15V

RG= 2,2Ω, Tvj= 125°C, Lσ= 15nH

tP ≤ 10µsec, VGE ≤ 15V

Tvj≤125°C, VCC=360V, VCEmax= VCES -LσCE ·di/dt

Modul-Leitungswiderstand, Anschlüsse - Chip

lead resistance, terminals - chip

Tc= 25°C

min. typ. max.

td,on

-

25

-

ns

-

26

-

ns

tr

-

10

-

ns

-

11

-

ns

td,off

-

130

-

ns

-

150

-

ns

tf

-

20

-

ns

-

30

-

ns

Eon

-

1,0

-

mJ

Eoff

-

2,9

-

mJ

ISC

-

450

-

A

LσCE

-

40

-

nH

RCC'+EE'

-

1,0

-

mΩ

Charakteristische Werte / Characteristic values

Diode / Diode

Durchlaßspannung

forward voltage

Rückstromspitze

peak reverse recovery current

Sperrverzögerungsladung

recoverred charge

Abschaltenergie pro Puls

reverse recovery energy

IF= 100A, VGE= 0V, Tvj= 25°C

IF= 100A, VGE= 0V, Tvj= 125°C

IF= 100A, -diF/dt= 4400A/µsec

VR= 300V, VGE= -10V, Tvj= 25°C

VR= 300V, VGE= -10V, Tvj= 125°C

IF= 100A, -diF/dt= 4400A/µsec

VR= 300V, VGE= -10V, Tvj= 25°C

VR= 300V, VGE= -10V, Tvj= 125°C

IF= 100A, -diF/dt= 4400A/µsec

VR= 300V, VGE= -10V, Tvj= 25°C

VR= 300V, VGE= -10V, Tvj= 125°C

min. typ. max.

-

1,25

1,6

V

VF

-

1,20

-

V

IRM

-

150

-

A

-

180

-

A

Qr

-

7,7

-

µC

-

13

-

µC

Erec

-

-

-

mJ

-

3,2

-

mJ

2 (8)

BSM 100 GB 60 DLC

2000-02-08

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