MSD-601ST1G(2006) 查看數據表（PDF） - ON Semiconductor
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MSD-601ST1G Datasheet PDF : 4 Pages
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MSD601−RT1, MSD601−ST1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Collector − Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
Collector − Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector − Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
Collector − Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
DC Current Gain (Note 1)
(VCE = 10 Vdc, IC = 2.0 mAdc)
MSD601−RT1
MSD601−ST1
(VCE = 2.0 Vdc, IC = 100 mAdc)
Collector − Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
Symbol
Min
Max
Unit
V(BR)CEO
50
−
Vdc
V(BR)CBO
60
−
Vdc
V(BR)EBO
70
−
Vdc
ICBO
−
0.1
mAdc
ICEO
−
100
nAdc
hFE1
hFE2
VCE(sat)
−
210
340
290
460
90
−
−
0.5
Vdc
ORDERING INFORMATION
Device
Package
Shipping†
MSD−601RT1
SC−59
3000 Units / Reel
MSD−601RT1G
SC−59
(Pb−Free)
3000 Units / Reel
MSD−601ST1
SC−59
3000 Units / Reel
MSD−601ST1G
SC−59
(Pb−Free)
3000 Units / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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