CMST2907A 查看數據表（PDF） - Central Semiconductor

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CMST2907A

SURFACE MOUNT PNP SILICON TRANSISTOR

Central Semiconductor 

CMST2907A

SURFACE MOUNT

PNP SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMST2907A

type is a PNP silicon transistor manufactured by

the epitaxial planar process, epoxy molded in a

SUPERmini™ surface mount package, designed

for small signal, general purpose and switching

applications.

MARKING CODE: 2FC

SOT-323 CASE

MAXIMUM RATINGS: (TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ, Tstg

ΘJA

60

60

5.0

600

275

-65 to +150

455

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=50V

ICBO

VCB=50V, TA=125°C

ICEV

VCE=30V, VEB=0.5V

BVCBO

IC=10µA

60

BVCEO

IC=10mA

60

BVEBO

IE=10µA

5.0

VCE(SAT) IC=150mA, IB=15mA

VCE(SAT) IC=500mA, IB=50mA

VBE(SAT) IC=150mA, IB=15mA

VBE(SAT) IC=500mA, IB=50mA

hFE

VCE=10V, IC=0.1mA

75

hFE

VCE=10V, IC=1.0mA

100

hFE

VCE=10V, IC=10mA

100

hFE

VCE=10V, IC=150mA

100

hFE

VCE=10V, IC=500mA

50

fT

VCE=20V, IC=50mA, f=100MHz

200

MAX

10

10

50

0.4

1.6

1.3

2.6

300

UNITS

V

V

V

mA

mW

°C

°C/W

UNITS

nA

µA

nA

V

V

V

V

V

V

V

MHz

R4 (9-February 2010)

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