HSK1118 查看數據表（PDF） - Hi-Sincerity Microelectronics
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HSK1118 Datasheet PDF : 5 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 4/5
Breakdown Voltage Variation & Temperature
1.20
1.15
1.10
1.05
1.00
0.95
25
50
75
100
125
Tc, Case Temperature (°C)
Body Diode Forward Voltage Variation &
Current & Temperature
10
Tc=100°C
Tc=25°C
8
6
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, Body Diode Forward Voltage (V)
100.00
10.00
Maximum Safe Operating Area (TO-220 FP)
VGS=10V
Si ngle Pulse
Tc=25°C
100us
1.00
RDS(on) Line
0.10
1ms
10ms
100ms
Dc
0.01
0.1
1
10
100
1000
VDS ,Drain-Source Voltage (V)
10000
Dynamic Input /Output Characteristics
16
ID=6A
14
Tc=25°C
12
VDD=240V
10
VDD=120V
8
VDD=400V
6
4
2
0
0
10
20
30
40
50
60
70
Total Gate Charge Qg (nC)
1.00
0.5
0.2
0.10
0.1
0.05
0.02
0.01
0.01
0.1
Transient Thermal Response Curve(TO-220FP)
Single Pulse
1
10
t 1 ,Time(ms)
RθJC(t) = r(t) * RθJC(t)
RθJC =2.46 °C / W
P(pk)
t1
t2
TJ-TC=P*RθJC(t)
Duty Cycle, D=t1/t2
100
1000
HSMC Product Specification
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