MSK4300 查看數據表（PDF） - Unspecified
零件编号
产品描述 (功能)
生产厂家
MSK4300 Datasheet PDF : 5 Pages
| |||
ABSOLUTE MAXIMUM RATINGS 6
V+
High Voltage Supply ○
7
○
○
○
○
○ -3V transient to +75V
VBIAS Bias Supply ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -0.3V to +16V
VIND Logic Input Voltages ○ ○ ○ ○ -0.3V to VBIAS +0.3V
IOUT
Continuous Output Current
10A
○
○
○
○
○
○
○
○
○
○
○
IPK
Peak Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 25A
AØ, BØ, CØ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -3V transient to +75V
R -3V transient to +3V SENSE ○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
ELECTRICAL SPECIFICATIONS
θJC Thermal Resistance ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 4.3°C/W
TST Storage Temperature Range ○ ○ -65°C to +150°C
TLD Lead Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +300°C
(10 Seconds)
TC Case Operating Temperature
MSK4300 ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -40°C to +85°C
MSK4300H ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -55°C to +125°C
TJ Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +150°C
MM
Parameter
Test Conditions
GroupA 4
MSK 4300H 3
Subgroup Min. Typ. Max.
CONTROL SECTION
VBIAS Quiescent Current
VBIAS Operating Current
Undervoltage Threshold (Falling)
Undervoltage Threshold (Rising)
Low Level Input Voltage 1
High Level Input Voltage 1
Low Level Input Current 1
High Level Input Current 1
All Inputs Off
1,2,3
-
2.5
8
f=20KHz, 50% Duty Cycle 1,2,3
-
12.5
25
1
5.75 6.6
7.6
1
6.2
7.1
8.1
-
-
-
0.8
-
2.7
-
-
VIN=0V
-
60
100 135
VIN=5V
-
-1
-
+1
OUTPUT BRIDGE
Drain-Source Breakdown Voltage 1 ID=50μA, All Inputs Off
-
70
-
-
Drain-Source Leakage Current 1
VDS=70V
-
-
-
250
Drain-Source On Resistance (Each FET)
ID=10A
1
-
-
0.300
Drain-Source On Resistance 1
(Each FET, For Thermal Calculations Only)
-
-
-
0.16
SWITCHING CHARACTERISTICS
Rise Time 1
Fall Time 1
Turn-On Prop Delay (Lower) 1
Turn-Off Prop Delay (Lower) 1
Turn-On Prop Delay (Upper) 1
Turn-Off Prop Delay (Upper) 1
Dead Time
Dead Time
V+=30V, RL=3Ω
ID=10A
SWR Resistor=∞
SWR Resistor=∞
SWR Resistor=∞
SWR Resistor=∞
SWR =∞
SWR=12K
-
-
5
-
-
-
6
-
-
-
0.5
2
-
-
5
8
-
-
5
8
-
-
0.5
2
4
3.0
5.0
7.0
4
0.3
0.6
1.20
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward Voltage
1
ISD=10A
-
Reverse Recovery Time 1
ISD=10A, di/dt=100A/μS
-
-
1.05 1.25
-
75
-
NOTES:
MSK 4300 2
Units
Min. Typ. Max.
2.5
8 mAmp
12.5 25 mAmp
5.6
6.6
7.6 Volts
6.1
7.1
8.1 Volts
-
-
0.8 Volts
2.7
-
- Volts
60 100 135 μAmp
-1
-
+1 μAmp
70
-
-
V
-
-
250 μAmp
-
-
0.300 Ω
-
-
0.16 Ω
-
5
- nSec
-
6
- nSec
-
0.5
3 μSec
-
5
10 μSec
-
5
10 μSec
-
0.5
3 μSec
3.0
5.0
7.0 μSec
0.3 0.6 1.20 μSec
-
1.05 1.25 Volts
-
75
- nSec
1 Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.
2 Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.
3 Military grade devices ("H" suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
4 Subgroups 5 and 6 testing available upon request.
5 Subgroup 1, 4 TA = TC = +25°C
2, 5 TA = TC = +125°C
3, 6 TA = TC = -55°C
6 Continuous operation at or above absolute maximum ratings may adversely effect the device performance and/or life cycle.
7 When applying power to the device, apply the low voltage followed by the high voltage or alternatively, apply both at the
same time. Do not apply high voltage without low voltage present.
2
Rev. J 8/11
Share Link: 