MMDT2227 查看數據表（PDF） - Secos Corporation.

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MMDT2227

NPN-PNP Silicon Multi-Chip Transistor

Secos Corporation. 

Elektronische Bauelemente

MMDT2227

NPN-PNP Silicon

Multi-Chip Transistor

PNP2907A ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base -emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol Test conditions

V(BR)CBO Ic=-10μA,IE=0

V(BR)CEO

V(BR)EBO

Ic=-10mA,IB=0

IE=-10μA,IC=0

ICBO

VCB=-50V,IE=0

IEBO

VEB=-3V,IC=0

hFE

VCE=-10V,IC=-150mA

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

fT

Cob

IC=-150mA,IB=-15mA

IC=-500mA,IB=-50mA

IC=-150mA,IB=-15mA

IC=-500mA,IB=-50mA

VCE=-20V,IC=-50mA,f=100MHz

VCB=-10V,IE=0,f=1MHz

MIN TYP MAX UNIT

-60

V

-60

V

-5

V

-10 nA

-10 nA

100

300

-0.4 V

-1.6

V

-1.3 V

-2.6

V

200

MHz

8

pF

+16 V

0

–2 V

SWITCHING TIME EQUIVALENT TEST CIRCUITS

1.0 to 100 µs,

Duty Cycle ≈ 2.0%

1 kΩ

< 2 ns

+ 30 V

200

CS* < 10 pF

+16 V

0

–14 V

1.0 to 100 µs,

Duty Cycle ≈ 2.0%

< 20 ns

1k

1N914

+ 30 V

200

CS* < 10 pF

Scope rise time < 4 ns

–4 V

*Total shunt capacitance of test jig, connectors, and oscilloscope.

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

http://www.SeCoSGmbH.com

01-Jan-2006 Rev. B

Any changing of specification will not be informed individual

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