2N5881 查看數據表（PDF） - Inchange Semiconductor
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2N5881 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Complement to type 2N5879 2N5880
APPLICATIONS
·For general-purpose power amplifier
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Product Specification
2N5881 2N5882
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5881
2N5882
VCEO
Collector-emitter voltage
2N5881
2N5882
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
60
80
60
80
5
15
30
5
160
150
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
VALUE
1.1
UNIT
℃/W
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