BC857C,215 查看數據表（PDF） - NXP Semiconductors.

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BC857C,215

65 V, 100 mA PNP general-purpose transistors

NXP Semiconductors. 

Nexperia

BC856; BC857; BC858

65 V, 100 mA PNP general-purpose transistors

5 Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

VCBO

collector-base voltage

BC856

open emitter

BC857

BC858B

VCEO

collector-emitter voltage

BC856

open base

BC857

BC858B

VEBO

IC

ICM

IBM

Ptot

emitter-base voltage

collector current

peak collector current

peak base current

total power dissipation

open collector

Tamb ≤ 25 °C

Min Max Unit

-

-80 V

-

-50 V

-

-30 V

-

-

-

-

-

-

-

[1]

-

-65 V

-45 V

-30 V

-5

V

-100 mA

-200 mA

-200 mA

250 mW

Tj

Tamb

Tstg

junction temperature

ambient temperature

storage temperature

-

150 °C

-65 150 °C

-65 150 °C

[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.

6 Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter

Rth(j-a)

thermal resistance from junction

to ambient

Conditions

in free air

Min Typ Max Unit

[1]

-

-

500 K/W

[1] Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint.

BC856_BC857_BC858

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 7 — 16 April 2018

© Nexperia B.V. 2018. All rights reserved.

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