7MBR30NE060 查看數據表（PDF） - Collmer Semiconductor

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7MBR30NE060

IGBT MODULE 600V / 30A / PIM

Collmer Semiconductor 

IGBT Module

7MBR30NE060

Electrical characteristics (Tj=25°C unless without specified)

Item

Symbol

Condition

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Collector-Emitter voltage

Input capacitance

Switching time

Reverse recovery time of FRD

Zero gate voltage collector current

Gate-Emitter leakage current

Collector-Emitter saturation voltage

Switching time

Reverse current

Reverse recovery time

Forward voltage

Reverse current

ICES

IGES

VGE(th)

VCE(sat)

-VCE

Cies

ton

tr

toff

tf

trr

ICES

IGES

VCE(sat)

ton

tr

toff

tf

IRRM

trr

VFM

IRRM

VCE=600V, VGE=0V

VCE=0V, VGE=±20V

VCE=20V, IC=30mA

VGE=15V, Ic=30A

-Ic=30A

VGE=0V, VCE=10V, f=1MHz

VCC=300V

IC=30A

VGE=±15V

RG=82 ohm

IF=30A

VCES=600V, VGE=0V

VCE=0V, VGE=±20V

IC=30A, VGE=15V

VCC=300V

IC=30A

VGE=±15V

RG=82ohm

VR=600V

IF=50A

VR=800V

Characteristics

Unit

Min.

Typ.

Max.

1.0 mA

20

µA

4.5

7.5 V

2.8 V

1980

3.0 V

pF

1.2 µs

0.6 µs

1.0 µs

0.35 µs

0.3 µs

1.0 mA

0.1 µA

2.8 V

0.8 µs

0.6 µs

1.0 µs

0.35 µs

1.0 mA

0.6 µs

1.55 V

1.0 mA

Thermal Characteristics

Item

Symbol

Condition

Inverter IGBT

Thermal resistance ( 1 device )

Rth(j-c)

Inverter FRD

Brake IGBT

Converter Diode

Contact thermal resistance *

Rth(c-f)

With thermal compound

* This is the value which is defined mounting on the additional cooling fin with thermal compound

Min.

Characteristics

Typ.

Max.

1.04

2.22

1.04

2.10

0.05

Unit

°C/W

Equivalent Circuit Schematic

* NLU (Over current Limiting circuit)

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