SM8S17HE3_A/I 查看數據表（PDF） - Vishay Semiconductors
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SM8S17HE3_A/I Datasheet PDF : 5 Pages
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www.vishay.com
SM8S10 thru SM8S43A
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to case
RJC
VALUE
0.90
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SM8S10AHE3/2D (1)
2.605
2D
SM8S10AHE3_A/I (1)
2.605
I
Note
(1) AEC-Q101 qualified
BASE QUANTITY
750
750
DELIVERY MODE
13" diameter plastic tape and reel,
anode towards the sprocket hole
13" diameter plastic tape and reel,
anode towards the sprocket hole
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
8.0
6.0
4.0
2.0
0
0
50
100
150
200
Case Temperature (°C)
Fig. 1 - Power Derating Curve
150
tr = 10 μs
Peak Value
IPPM
100
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
td
0
0
10
20
30
40
t - Time (ms)
Fig. 3 - Pulse Waveform
6000
5000
4000
3000
2000
1000
0
25
50
75
100
125
150
175
Case Temperature (°C)
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
10 000
1000
10
100
Pulse Width (ms) - ½ IPP Exponential Waveform
Fig. 4 - Reverse Power Capability
Revision: 31-Aug-16
3
Document Number: 88387
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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