DMC1017UPD(2014) 查看數據表（PDF） - Diodes Incorporated.
零件编号
产品描述 (功能)
生产厂家
DMC1017UPD Datasheet PDF : 9 Pages
| |||
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t<10s
Maximum Body Diode Forward Current
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
DMC1017UPD
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Q1 Value
12
±8
9.5
7.6
13.0
10.4
2
50
9.7
4.7
Q2 Value
-12
±8
-6.9
-5.5
-9.4
-7.5
-2
-35
-9.2
4.3
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<10s
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
2.3
1.5
54
29
4.1
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics Q1 N-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
12
IDSS
⎯
IGSS
⎯
VGS(th)
0.6
⎯
RDS(ON)
⎯
VSD
⎯
Ciss
⎯
Coss
⎯
Crss
⎯
RG
⎯
Qg
⎯
Qg
⎯
Qgs
⎯
Qgd
⎯
tD(on)
⎯
tr
⎯
tD(off)
⎯
tf
⎯
trr
—
Qrr
—
Typ
⎯
⎯
⎯
⎯
9.6
11
0.7
1787
297
265
1.6
18.6
35.4
2.7
3.8
6.9
10.9
70.3
31.8
13.1
2.2
Max
⎯
1
±100
1.5
17
25
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
—
—
Unit
Test Condition
V
VGS = 0V, ID = 250µA
µA VDS = 12V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V
VDS = VGS, ID = 250µA
mΩ VGS = 4.5V, ID = 11.8A
VGS = 2.5V, ID = 9.8A
V
VGS = 0V, IS = 2.9A
pF
VDS = 6V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = 6V, ID = 11.8A
nS
VDD = 6V, RL = 6Ω
VGS = 4.5V, RG = 6Ω, ID = 1A
nS IF = 11.8A, di/dt = 100A/μs
nC IF = 11.8A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMC1017UPD
Document number: DS36903 Rev. 1 - 0
2 of 9
www.diodes.com
April 2014
© Diodes Incorporated
Share Link: 