2N3789 查看數據表（PDF） - Central Semiconductor Corp
零件编号
产品描述 (功能)
生产厂家
2N3789 Datasheet PDF : 2 Pages
| |||
DATA SHEET
2N3789
2N3790
2N3791
2N3792
PNP POWER TRANSISTORS
JEDEC TO-3 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar
process and designed for medium speed switching and amplifier applications.
MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ,Tstg
ΘJC
2N3789
2N3791
60
60
7.0
10
4.0
150
-65 to +200
1.17
2N3790
2N3792
80
80
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
2N3789
2N3791
SYMBOL
TEST CONDITIONS
MIN MAX
ICEV
VCE= Rated VCEO, VEB=1.5V
1.0
ICEV
VCE= Rated VCEO, VEB=1.5V, TC=150°C
5.0
IEBO
VEB=7.0V
5.0
BVCEO
IC=200mA
60
VCE(SAT)
IC=4.0A, IB=400mA (2N3789, 2N3790)
1.0
VCE(SAT)
IC=5.0A, IB=500mA (2N3791, 2N3792)
1.0
VBE(ON)
VCE=2.0V, IC=5.0A (2N3789, 2N3790)
2.0
VBE(ON)
VCE=2.0V, IC=5.0A (2N3791, 2N3792)
1.8
VBE(ON)
VCE=4.0V, IC=10A
4.0
hFE
VCE=2.0V, IC=1.0A (2N3789, 2N3790)
25
90
hFE
VCE=2.0V, IC=1.0A (2N3791, 2N3792)
50 180
hFE
VCE=2.0V, IC=3.0A (2N3789, 2N3790)
15
hFE
VCE=2.0V, IC=3.0A (2N3791, 2N3792)
30
fT
VCE=10V, IC=500mA, f=1.0MHz
4.0
2N3790
2N3792
MIN MAX
1.0
5.0
5.0
80
1.0
1.0
2.0
1.8
4.0
25
90
50 180
15
30
4.0
UNITS
mA
mA
mA
V
V
V
V
V
V
MHz
(SEE REVERSE SIDE)
R1
Share Link: 