2N4234 查看數據表（PDF） - Microsemi Corporation

零件编号

产品描述 (功能)

生产厂家

2N4234

NPN POWER AMPLIFIER SILICON TRANSISTOR

Microsemi Corporation 

2N4234, 2N4235, 2N4236 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS (3)

Forward-Current Transfer Ratio

IC = 100 mAdc, VCE = 1.0 Vdc

IC = 250 mAdc, VCE = 1.0 Vdc

IC = 500 mAdc, VCE = 1.0 Vdc

Collector-Emitter Saturation Voltage

IC = 1.0 Adc, IB = 100 mAdc

IC = 500 mAdc, IB = 50 mAdc

Base-Emitter Saturation Voltage

IC = 500 mAdc, IB = 50 mAdc

IC = 1.0 Adc, IB = 100 mAdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz

Output Capacitance

VCB = 10 Vdc, IE = 0, f = 100 MHz

SAFE OPERATING AREA

DC Tests

TC = +250C, 1 cycle, t ≥ 0.5 s

Test 1

VCE = 6.0 Vdc, IC = 1.0 Adc

Test 2

VCE = 12 Vdc, IC = 500 mAdc

Test 3

VCE = 30 Vdc, IC = 166 mAdc 2N4234

VCE = 30 Vdc, IC = 166 mAdc 2N4235

VCE = 30 Vdc, IC = 166 mAdc 2N4236

(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Symbol

hFE

VCE(sat)

VBE(sat)

hfe

Cobo

Min. Max. Unit

40

30

150

20

0.6

Vdc

0.4

1.1

Vdc

1.5

3.0

100

pF

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

Share Link: