2N5002 查看數據表（PDF） - Microsemi Corporation
零件编号
产品描述 (功能)
生产厂家
2N5002 Datasheet PDF : 2 Pages
| |||
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Forward-Current Transfer Ratio
IC = 50mAdc, VCE = 5.0Vdc
IC = 2.5Adc, VCE = 5.0Vdc
IC = 5.0Adc, VCE = 5.0Vdc
2N5002
IC = 50mAdc, VCE = 5.0Vdc
IC = 2.5Adc, VCE = 5.0Vdc
IC = 5.0Adc, VCE = 5.0Vdc
Base-Emitter Voltage Non-Saturated
VCE = 5.0Vdc, IC = 2.5Adc
Collector-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc
Base-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc
DYNAMIC CHARACTERISTICS
2N5004
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit. Forward Current
Transfer Ratio
IC = 500mA, VCE = 5.0Vdc, f = 10MHz
2N5002
2N5004
Output Capacitance
VCB = 10Vdc
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
IC = 5Adc; IB1 = 500mAdc
Storage Time
IB2 = -500mAdc
Fall Time
VBE(OFF) = 3.7Vdc
Turn-Off Time
RL = 6Ω
SAFE OPERATING AREA
DC Tests
TC = +25°C, VCE = 0, tp = 1s, 1 Cycle
Test 1
VCE = 12Vdc, IC = 5.0Adc
Test 2
VCE = 32Vdc, IC = 1.7Adc
Test 3
VCE = 80Vdc, IC = 100mAdc
Symbol
hFE
VBE
VCE(sat)
VBE(sat)
Symbol
|hfe|
Cobo
Symbol
ton
ts
tf
toff
Min.
20
30
20
50
70
40
Min.
6.0
7.0
Min.
Max.
---
90
---
---
200
---
1.45
0.75
1.5
1.45
2.2
Max.
Unit
Vdc
Vdc
Vdc
Unit
250
pF
Max.
0.5
1.4
0.5
1.5
Unit
μs
μs
μs
μs
T4-LDS-0038 Rev. 2 (081508)
Page 2 of 2
Share Link: 