HMPSA64 查看數據表（PDF） - Hi-Sincerity Microelectronics
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HMPSA64 Datasheet PDF : 4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6333-B
Issued Date : 1992.11.18
Revised Date : 2000.10.01
Page No. : 1/4
HMPSA64
PNP SILICON TRANSISTOR
Description
The HMPSA64 is designed for application requiring extremely high
current gain at collector currents to 500mA.
Features
• High D.C Current Gain
• For Complementary Use with NPN Type HMPSA14
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -30 V
VCEO Collector to Emitter Voltage .................................................................................... -30 V
VEBO Emitter to Base Voltage .......................................................................................... -10 V
IC Collector Current ...................................................................................................... -500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-30
-
BVCES
-30
-
BVEBO
-10
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
10
-
*hFE2
20
-
fT
125
-
Max.
-
-
-
-100
-100
-1.5
-2
-
-
-
Unit
Test Conditions
V
IC=-100uA, IE=0
V
IC=-100uA, IB=0
V
IE=-10uA, IC=0
nA VCB=-30V, IE=0
nA VEB=-10V, IC=0
V
IC=-100mA, IB=-0.1mA
V
IC=-100mA, VCE=-5V
K
IC=-10mA, VCE=-5V
K
IC=-100mA, VCE=-5V
pF IC=-100mA, VCE=-5V, f=100MHZ
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
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