HMBT5089 查看數據表（PDF） - Hi-Sincerity Microelectronics
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HMBT5089 Datasheet PDF : 3 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6816
Issued Date : 1993.08.26
Revised Date : 2002.10.25
Page No. : 1/3
HMBT5089
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT5089 is designed for low noise, high gain, general purpose
amplifier applications.
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 30 V
VCEO Collector to Emitter Voltage...................................................................................... 25 V
VEBO Emitter to Base Voltage........................................................................................... 4.5 V
IC Collector Current ......................................................................................................... 50 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
30
-
BVCEO
25
-
BVEBO
4.5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
400
-
*hFE2
450
-
*hFE3
400
-
fT
50
-
Cob
-
-
Max.
-
-
-
50
100
500
800
1200
-
-
-
4.0
Unit
Test Conditions
V
V
V
nA
nA
mV
mV
MHz
pF
IC=100uA
IC=1mA
IE=10uA
VCB=15V
VEB=4.5V
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=5V, IC=0.1mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=0.5mA, f=20MHz
VCB=5V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT5089
HSMC Product Specification
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