NTE2684
Silicon NPN Transistor
High Current Switch
TO126 Type Package
Absolute Maximum Ratings: (TA = +255C unless otherwise specified)
Collector−Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector−Emitter Voltage (Open Base), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Emitter−Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak Collector Current, ICM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak Base Current, IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (TC 3 +755C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1505C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5K/W
Electrical Characteristic: (TJ = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Capacitance
Transition Frequency
Turn−On Time
Turn−Off Time
VCE(sat)
VBE(sat)
ICBO
IEBO
hFE
CC
fT
ton
toff
IC = 5A, IB = 0.5A
IC = 7A, IB = 0.7A
IC = 5A, IB = 0.5A
IC = 7A, IB = 0.7A
VCB = 100V,
IE = 0
TJ = +1005C
VEB = 5V, IC = 0
IC = 0.5A, VCE = 10V
IE = 0, VCB = 10V, f = 1MHz
IC = 0.5A, VCE = 5V, f = 100MHz
ICon = 1A, IBon = −IBoff = 0.1A
ICon = 2A, IBon = −IBoff = 0.2A
ICon = 5A, IBon = −IBoff = 0.5A
ICon = 1A, IBon = −IBoff = 0.1A
ICon = 2A, IBon = −IBoff = 0.2A
ICon = 5A, IBon = −IBoff = 0.5A
Min Typ Max Unit
−
− 0.9 V
−
− 1.2 V
−
− 1.7 V
−
− 2.0 V
−
− 0.1 3A
−
− 10 3A
−
− 0.1 3A
45 − 450
− 40 − pF
− 100 − MHz
− 60 100 ns
−
− 80 ns
− 180 300 ns
− 600 800 ns
− 450 700 ns
− 350 500 ns