SGP10N60RUFD 查看數據表（PDF） - Fairchild Semiconductor
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SGP10N60RUFD Datasheet PDF : 8 Pages
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1400
1200
1000
800
600
400
200
0
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Cies
Coes
Cres
1
10
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 10A
TC = 25℃ ━━
TC = 125℃ ------
Toff
Toff
Tf
Tf
100
10
100
Gate Resistance, RG []
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 10A
TC = 25℃ ━━
TC = 125℃ ------
Ton
100
Tr
10
10
100
Gate Resistance, RG []
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 10A
TC = 25℃ ━━
TC = 125℃ ------
Eoff
Eon
Eoff
100
10
100
Gate Resistance, RG []
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
VGE = ± 15V, RG = 20
TC = 25℃ ━━
TC = 125℃ ------
100
Ton
Tr
10
6
8
10
12
14
16
18
20
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
1000
Common Emitter
VGE = ± 15V, RG = 20
TC = 25℃ ━━
TC = 125℃ ------
Toff
Tf
Toff
Tf
100
6
8
10
12
14
16
18
20
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
©1999 Fairchild Semiconductor Corporation
4
SGP10N60RUFD Rev. C2
www.fairchildsemi.com
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