G10T60(2006) 查看數據表（PDF） - Infineon Technologies

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G10T60
(Rev.:2006)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGP10N60T

q

Switching Characteristic 3), Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25°C,

VCC=400V,IC=10A,

VGE=0/15V,

RG=23Ω,

Lσ2)=60nH,

Cσ2)=40pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

12

8

215

38

0.16

0.27

0.43

Unit

max.

- ns

-

-

-

- mJ

-

-

Switching Characteristic 3), Inductive Load, at Tj=175 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=175°C,

VCC=400V,IC=10A,

VGE=0/15V,

RG= 23Ω

Lσ2)=60nH,

Cσ2)=40pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

10

11

233

63

0.26

0.35

0.61

Unit

max.

- ns

-

-

-

- mJ

-

-

2) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

3) Diode from device IKP10N60T

Power Semiconductors

3

Rev. 2.2 June 06

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