IXTP10N60P(2010) 查看數據表（PDF） - IXYS CORPORATION
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IXTP10N60P Datasheet PDF : 4 Pages
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Fig. 7. Input Admittance
16
14
12
10
TJ = 125ºC
25ºC
- 40ºC
8
6
4
2
0
3.2
3.6
4.0
4.4
4.8
5.2
5.6
6.0
6.4
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
30
25
20
15
10
TJ = 125ºC
TJ = 25ºC
5
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD - Volts
10,000
1,000
Fig. 11. Capacitance
f = 1 MHz
Ciss
IXTA10N60P
IXTP10N60P
Fig. 8. Transconductance
22
20
TJ = - 40ºC
18
16
25ºC
14
12
125ºC
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
ID - Amperes
Fig. 10. Gate Charge
10
9
VDS = 300V
8
I D = 5A
I G = 10mA
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
1
100
0.1
Coss
10
Crss
1
0.01
0
5
10
15
20
25
30
35
40
0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXF_10N60P (4J)4-18-10-D
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