STP11NM50N 查看數據表（PDF） - STMicroelectronics

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STP11NM50N

N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET in DPAK, TO-220FP and TO-220

STMicroelectronics 

STD11NM50N, STF11NM50N, STP11NM50N

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 250 V, ID = 4.25 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 19)

Min. Typ. Max Unit

8

ns

10

ns

-

-

33

ns

10

ns

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 8.5 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 8.5 A, di/dt = 100 A/µs -

VDD = 60 V (see Figure 22)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 8.5 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

-

(see Figure 22)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

8.5 A

34 A

1.5 V

230

ns

2.1

µC

18

A

275

ns

2.5

µC

18

A

Doc ID 17156 Rev 3

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