NP1800SBT3G(2006) 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
NP1800SBT3G Datasheet PDF : 5 Pages
| |||
NP Series
SURGE RATINGS
Characteristics
Nominal Pulse
Surge Short Circuit Current Non – Repetitive
Double Exponential Decay Waveform (Notes 5, 6 and 7)
2 x 10 mSec
8 x 20 mSec
10 x 160 mSec
10 x 360 mSec
10 x 560 mSec
10 x 700 mSec
10 x 1000 mSec
5. Allow cooling before testing second polarity.
6. Measured under pulse conditions to reduce heating.
7. Nominal values may not represent the maximum capability of a device.
Symbol
A
B
C
IPPS1
IPPS2
IPPS3
IPPS4
IPPS5
IPPS6
IPPS7
150
250
500
150
250
400
90
150
200
75
125
150
50
100
150
75
100
200
50
80
100
Unit
A(pk)
+I
tr = rise time to peak value
100
Peak
Value
tf = decay time to half value
IT
I(BO)
IH
50
Half Value
−Voltage
+Voltage
VT
VDRM V(BO)
0
0 tr
tf
TIME (ms)
Figure 1. Exponential Decay Pulse Waveform
Symbol
VDRM
V(BO)
I(BO)
IH
VT
IT
Parameter
Peak Off State Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
On State Current
−I
Figure 2. Voltage Current Characteristics of TSPD
http://onsemi.com
3
Share Link: 