NP0720SBT3G 查看數據表（PDF） - ON Semiconductor
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NP0720SBT3G Datasheet PDF : 5 Pages
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NP Series
SURGE RATINGS
Characteristics
Nominal Pulse
Surge Short Circuit Current Non – Repetitive
Double Exponential Decay Waveform (Notes 5, 6 and 7)
2 x 10 mSec
10 x 160 mSec
10 x 360 mSec
10 x 560 mSec
10 x 700 mSec
10 x 1000 mSec
5. Allow cooling before testing second polarity.
6. Measured under pulse conditions to reduce heating.
7. Nominal values may not represent the maximum capability of a device.
Symbol
A
IPPS1
150
IPPS3
90
IPPS4
75
IPPS5
50
IPPS6
75
IPPS7
50
THERMAL CHARACTERISTICS
Symbol
Rating
TSTG
TJ
R0JA
Storage Temperature Range
Operating Temperature Range
Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
B
C
250
500
150
200
125
150
100
150
100
200
80
100
Value
−65 to +150
−40 to +150
90
+I
Unit
A(pk)
Unit
°C
°C
°C/W
tr = rise time to peak value
100
Peak
Value
tf = decay time to half value
IT
I(BO)
IH
50
Half Value
−Voltage
+Voltage
VT
VDRM V(BO)
0
0 tr
tf
TIME (ms)
Figure 1. Exponential Decay Pulse Waveform
Symbol
VDRM
V(BO)
I(BO)
IH
VT
IT
Parameter
Peak Off State Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
On State Current
−I
Figure 2. Voltage Current Characteristics of TSPD
http://onsemi.com
3
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