HSU119 查看數據表（PDF） - Renesas Electronics

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HSU119

Silicon Epitaxial Planar Diode for High Speed Switching

Renesas Electronics 

HSU119

Absolute Maximum Ratings

Item

Peak reverse voltage

Reverse voltage

Peak forward current

Non-Repetitive peak forward surge current

Average rectified current

Junction temperature

Storage temperature

Note: 1. Within 1µs forward surge current.

Symbol

VRM

VR

IFM

IFSM *1

IO

Tj

Tstg

Value

85

80

300

4

100

125

–55 to +125

(Ta = 25°C)

Unit

V

V

mA

A

mA

°C

°C

Electrical Characteristics

Item

Symbol Min

Typ

Forward voltage

VF1

—

—

VF2

—

—

Reverse current

IR

—

—

Capacitance

C

—

—

Reverse recovery time*1 trr

—

—

Note: 1. Reverse recovery time test circuit

(Ta = 25°C)

Max

Unit Test Condition

0.8

V

IF = 10 mA

1.2

IF = 100 mA

0.1

µA

VR = 80 V

2.0

pF

VR = 0 V, f = 1 MHz

3.0

ns

IF = 10 mA, VR = 6 V, RL = 50 Ω

DC

Supply

Ro = 50Ω Pulse

Generator

0.1µF

3kΩ

Trigger

Sampling

Oscilloscope

Rin = 50Ω

Rev.1.00, Mar.22.2004, page 2 of 4

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