NTE8212 查看數據表（PDF） - NTE Electronics

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NTE8212

Integrated Circuit Schottky, 8–Bit Input/Output Port

NTE Electronics 

Electrical Characteristics: (TA = 0° to +70°C, VCC = 5V ±5% unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

DC Characteristics

Input Load Current

STB, DS2, CLR, DI1 – DI8 Inputs

MD Input

DS1 Input

Input Leakage Current

STB, DS, CLR, DI1 – DI8 Inputs

MD Input

DS1 Input

Input Forward Voltge Clamp

Input “Low” Voltage

Input “High” Voltage

Output “Low” Voltage

Output “High” Voltage

Short Circuit Output Current

Output Leakage Current, High Impedance

State (DO0 – DO8)

Power Supply Current

AC Characteritics

|IL1| VF = 0.45V

|IL2|

|IL3|

|IH1|

|IH2|

|IH3|

VC

VIL

VIH

VOL

VOH

IO5

IO

VR = 5.25V

IC = –5mA

IOL = 15mA

IOH = –1mA

VO = 0V, VCC = 5V

VO = 0.45V/5.25V

ICC

–

– –0.25 mA

–

– –0.75 mA

–

– –1.0 mA

–

– 10 µA

–

– 30 µA

–

– 40 µA

–

– –1.0 V

–

– 0.85 V

2.0 –

–

V

–

– 0.48 V

3.65 –

–

V

–15 – –75 mA

–

– 20 µA

–

– 130 mA

Pulse Width

Data to Output Delay

Write Enable to Output Delay

data Setup Time

Data Hold Time

Reset to Output Delay

Set to Output Delay

Output Enable/Disable Time (Note 2)

Clear to Output Delay

tpw Input Pulse Amplitude = 2.5V, 30 –

–

ns

tpd

Input Rise & Fall Times = 5ns,

Between 1V and 2V

–

– 30 ns

twe

Measurement made

at 1.5V with 15mA and 30pF

–

– 40 ns

tset Test Load

15 –

–

ns

th

20 –

–

ns

tr

–

– 40 ns

ts

–

– 30 ns

te/td

–

– 45 ns

tc

–

– 55 ns

Note 2. R1 = 300Ω/10KΩ; R2 = 600Ω/1KΩ

Capacitance: (TA = +25°C, VCC = 5V, VBIAS = 2.5V, f = 1MHz, Note 3 unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Input Capacitance

Input Capacitance

Output Capacitance

CIN

CIN

COUT

DS1, MD

DS2, CLR, STB, DI1 – DI8

DO1 – DO8

–

– 12 pF

–

–

9 pF

–

– 12 pF

Note 3. This parameter is periodically sampled and not 100% tested.

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