SZP6SMB51CAT3G(2016) 查看數據表（PDF） - ON Semiconductor

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SZP6SMB51CAT3G
(Rev.:2016)

600 Watt Peak Power Zener Transient Voltage Suppressors

ON Semiconductor 

P6SMB11CAT3G Series, SZP6SMB11CAT3G Series

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms

PPK

600

W

DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2)

Derate Above 75°C

Thermal Resistance, Junction−to−Lead

PD

RqJL

3.0

W

40

mW/°C

25

°C/W

DC Power Dissipation (Note 3) @ TA = 25°C

Derate Above 25°C

Thermal Resistance, Junction−to−Ambient

PD

RqJA

0.55

W

4.4

mW/°C

226

°C/W

Operating and Storage Temperature Range

TJ, Tstg

−65 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. 10 X 1000 ms, non−repetitive

2. 1″ square copper pad, FR−4 board

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

VC

VRWM

IR

VBR

IT

QVBR

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

Breakdown Voltage @ IT

Test Current

Maximum Temperature Coefficient of VBR

I

IPP

VC VBR VRWM IIRT

IR

IT

V

VRWM VBR VC

IPP

Bi−Directional TVS

ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)

Device*

Device

Marking

VRWM

(Note 4)

Volts

IR @

VRWM

mA

Breakdown Voltage

VBR Volts (Note 5)

Min Nom Max

@ IT

mA

VC @ IPP (Note 6)

VC

IPP

Volts Amps

QVBR

%/°C

Ctyp

(Note 7)

pF

P6SMB11CAT3G

P6SMB12CAT3G

11C

9.4

5

10.5 11.05 11.6 1

15.6

38

0.075

865

12C

10.2

5

11.4 12 12.6 1

16.7

36

0.078

800

P6SMB15CAT3G

P6SMB16CAT3G

P6SMB18CAT3G

P6SMB20CAT3G

15C

12.8

5

14.3 15.05 15.8 1

21.2

28

0.084

645

16C

13.6

5

15.2 16 16.8 1

22.5

27

0.086

610

18C

15.3

5

17.1 18 18.9 1

25.2

24

0.088

545

20C

17.1

5

19

20

21

1

27.7

22

0.09

490

P6SMB22CAT3G

P6SMB24CAT3G

P6SMB27CAT3G

P6SMB30CAT3G

22C

18.8

5

20.9 22 23.1 1

30.6

20

0.09

450

24C

20.5

5

22.8 24 25.2 1

33.2

18

0.094

415

27C

23.1

5

25.7 27.05 28.4 1

37.5

16

0.096

370

30C

25.6

5

28.5 30 31.5 1

41.4

14.4

0.097

335

P6SMB33CAT3G

P6SMB36CAT3G

P6SMB39CAT3G

P6SMB43CAT3G

33C

28.2

5

31.4 33.05 34.7 1

45.7

13.2

0.098

305

36C

30.8

5

34.2 36 37.8 1

49.9

12

0.099

280

39C

33.3

5

37.1 39.05 41

1

53.9

11.2

0.1

260

43C

36.8

5

40.9 43.05 45.2 1

59.3

10.1

0.101

240

P6SMB47CAT3G

P6SMB51CAT3G

P6SMB56CAT3G

P6SMB62CAT3G

47C

40.2

5

44.7 47.05 49.4 1

64.8

9.3

0.101

220

51C

43.6

5

48.5 51.05 53.6 1

70.1

8.6

0.102

205

56C

47.8

5

53.2 56 58.8 1

77

7.8

0.103

185

62C

53

5

58.9 62 65.1 1

85

7.1

0.104

170

P6SMB68CAT3G

P6SMB82CAT3G

68C

58.1

5

64.6 68 71.4 1

92

6.5

0.104

155

82C

70.1

5

77.9 82 86.1 1

113

5.3

0.105

130

4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than

the DC or continuous peak operating voltage level.

5. VBR measured at pulse test current IT at an ambient temperature of 25°C.

6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 600 Watt at the beginning of this group.

7. Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C

*Include SZ-prefix devices where applicable.

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