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SZP6SMB18CAT3G(2016) 查看數據表(PDF) - ON Semiconductor

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SZP6SMB18CAT3G
(Rev.:2016)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
SZP6SMB18CAT3G Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
P6SMB11CAT3G Series, SZP6SMB11CAT3G Series
100
PULSE WIDTH (tP) IS DEFINED AS
NONREPETITIVE
PULSE WAVEFORM
tr 10 ms
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF
SHOWN IN FIGURE 2
100
IPP.
10
PEAK VALUE - IPP
HALF VALUE - IPP
2
1
50
tP
0.1
0.1 ms 1 ms
10 ms
100 ms
1 ms
10 ms
0
0
1
2
3
4
5
tP, PULSE WIDTH
t, TIME (ms)
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
160
1000
P6SMB11CAT3G
140
P6SMB18CAT3G
120
P6SMB47CAT3G
100
100
80
P6SMB91CAT3G
60
10
40
TJ = 25°C
20
f = 1 MHz
0
1
0
25
50
75
100
125
150
1
TA, AMBIENT TEMPERATURE (°C)
10
100
BIAS VOLTAGE (VOLTS)
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance vs. Bias
Voltage
TYPICAL PROTECTION CIRCUIT
Zin
Vin
LOAD
VL
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