FDPF33N25TRDTU 查看數據表（PDF） - Fairchild Semiconductor

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FDPF33N25TRDTU

FDPF33N25T / 33N25T / N-Channel UniFETTM MOSFET 250V, 33A

Fairchild Semiconductor 

FDPF33N25T

N-Channel UniFETTM MOSFET

250 V, 33 A, 94 m

Features

• RDS(on) = 94 m (Max.) @ VGS = 10 V, ID = 16.5 A

• Low Gate Charge (Typ.36.8 nC)

• Low Crss (Typ. 39 pF)

• Improved dv/dt Capability

Applications

• PDP TV

• Lighting

• Uninterruptible Power Supply

• AC-DC Power Supply

March 2013

Description

UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. This device family is suitable for switching

power converter applications such as power factor correction

(PFC), flat panel display (FPD) TV power, ATX and electronic

lamp ballasts.

D

G

GDS

TO-220F

Absolute Maximum Ratings

Symbol

Parameter

VDSS

ID

IDM

Drain-Source Voltage

Drain Current

Drain Current

- Continuous (TC = 25C)

- Continuous (TC = 100C)

- Pulsed

(Note 1)

VGSS

EAS

IAR

EAR

dv/dt

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note 2)

(Note 1)

(Note 1)

(Note 3)

PD

Power Dissipation (TC = 25C)

- Derate above 25C

TJ, TSTG

TL

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

RJC

RJA

Parameter

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient, Max.

©2007 Fairchild Semiconductor Corporation

1

FDPF33N25T Rev. C0

S

FDPF33N25T

250

33*

20.4*

132*

 30

918

33

23.5

4.5

37

0.29

-55 to +150

300

FDPF33N25T

3.4

62.5

Unit

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/C

C

C

Unit

C/W

C/W

www.fairchildsemi.com

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