STB160NF3LL_06 查看數據表（PDF） - STMicroelectronics

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STB160NF3LL_06

N-channel 30V - 0.0028Ω - 160A - D2PAK STripFET™ III Power MOSFET

STMicroelectronics 

STB160NF3LL

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 160A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 160A, di/dt =

100A/µs,

VDD = 20V, Tj = 150°C

(see Figure 15)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

160 A

640 A

1.3 V

100

ns

250

nC

6

A

5/13

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