TIP35C 查看數據表（PDF） - Power Innovations Ltd
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TIP35C Datasheet PDF : 6 Pages
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TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
Collector-emitter
ICES cut-off current
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IC = 30 mA
(see Note 5)
VCE = 80 V
VCE = 100 V
VCE = 120 V
VCE = 140 V
VCE = 30 V
VCE = 60 V
VEB = 5 V
VCE = 4 V
VCE = 4 V
IB = 1.5 A
IB = 5 A
VCE = 4 V
VCE = 4 V
VCE = 10 V
VCE = 10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IC = 0
IC = 1.5 A
IC = 15 A
IC = 15 A
IC = 25 A
IC = 15 A
IC = 25 A
IC = 1 A
IC = 1 A
TIP35
40
TIP35A
60
TIP35B
80
TIP35C
100
TIP35
0.7
TIP35A
0.7
TIP35B
0.7
TIP35C
0.7
TIP35/35A
1
TIP35B/35C
1
1
25
(see Notes 5 and 6)
10
50
1.8
(see Notes 5 and 6)
4
2
(see Notes 5 and 6)
4
f = 1 kHz
25
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1 °C/W
35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton
Turn-on time
toff
Turn-off time
IC = 15 A
VBE(off) = -4.15 V
IB(on) = 1.5 A
RL = 2 Ω
IB(off) = -1.5 A
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1.2
µs
0.9
µs
PRODUCT INFORMATION
2
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