NTE2343NPN 查看數據表（PDF） - NTE Electronics

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NTE2343NPN

Silicon Complementary Transistors Darlington Power Amp, Switch

NTE Electronics 

NTE2343 (NPN) & NTE2344 (PNP)

Silicon Complementary Transistors

Darlington Power Amp, Switch

Absolute Maximum Ratings:

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

Collector Current, IC

DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A

Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA

Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56°C/W

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector–Emitter Sustaining Voltage

Collector Cutoff Current

VCEO(sus) IC = 100mA, IB = 0, Note 1

ICBO VCB = 100V, IE = 0

ICEO VCE = 100V, IB = 0

Emitter Cutoff Current

DC Current Gain

IEBO

hFE

VEB = 5V, IC = 0

VCE = 3V, IC = 3A

VCE = 3V, IC = 5A

VCE = 3V, IC = 10A

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

VCE(sat)

VBE(sat)

IC = 5A, IB = 20mA, Note 1

IC = 10A, IB = 100mA, Note 1

IC = 5A, IB = 20mA, Note 1

IC = 10A, IB = 100mA, Note 1

Parallel Diode Forward Voltage

Vf If = 5A, Note 1

Small–Signal Current Gain

If = 10A, Note 1

hfe IC = 1A, VCE = 10V, f = 1MHz

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.

Min Typ Max Unit

100 –

–

V

–

– 100 µA

–

–

1 mA

–

–

2 mA

1000 –

–

750 – 1000

100 –

–

–

– 2.0 V

–

– 3.0 V

–

– 2.5 V

–

– 4.0 V

– 1.3 2.0 V

– 1.8 4.0 V

20 –

–

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