NTE583 查看數據表（PDF） - NTE Electronics

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NTE583

Silicon Rectifier Diode Schottky, RF Switch

NTE Electronics 

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Units

Static Characteristics

Breakdown Voltage

Continuous Forward Voltage

Continuous Reverse Current

V(BR)

VF(1)

IR(1)

IR = 10µA

IF = 1mA

IF = 15mA

VR = 50V

70 – – V

– – 0.41 V

––1 V

– – 0.2 µA

Dynamic Characteristics

Small Signal Capacitance

Minority Carrier Life Time

C VR = 0, f = 1MHZ

–

τ IF = 5mA, Krakauer Method –

– 2 pF

– 100 ps

Note 1. Pulse Test tp ≤ 300µs δ < 2%

1.000

(25.4)

Min

.200

(5.08)

Max

.022 (.509) Dia Max

.090 (2.28)

Dia Max

Color Band Denotes Cathode

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