BC846BPDW1T1G(2010) 查看數據表（PDF） - ON Semiconductor

零件编号

产品描述 (功能)

生产厂家

BC846BPDW1T1G
(Rev.:2010)

Dual General Purpose Transistors NPN/PNP Duals (Complementary)

ON Semiconductor 

BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G

TYPICAL PNP CHARACTERISTICS — BC846

500

150°C

400

25°C

300

200 −55°C

100

VCE = 1 V

0.30

0.25

IC/IB = 20

0.20

0.15

0.10

0.05

150°C

25°C

−55°C

0

0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 9. DC Current Gain vs. Collector

Current

1.0

0.9 IC/IB = 20

−55°C

0.8

25°C

0.7

0.6

150°C

0.5

0.4

0.3

0.2

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

Figure 11. Base Emitter Saturation Voltage vs.

Collector Current

0

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

Figure 10. Collector Emitter Saturation Voltage

vs. Collector Current

1.2

1.1

VCE = 5 V

1.0

0.9

−55°C

0.8

25°C

0.7

0.6

150°C

0.5

0.4

0.3

0.2

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

Figure 12. Base Emitter Voltage vs. Collector

Current

-2.0

-1.0

-1.6

IC =

-1.2 -10 mA

-0.8

-20 mA

-50 mA -100 mA -200 mA

-1.4

-1.8

qVB for VBE

-2.2

-55°C to 125°C

-0.4

TJ = 25°C

0

-0.02 -0.05 -0.1

-0.2 -0.5 -1.0 -2.0

IB, BASE CURRENT (mA)

-5.0 -10 -20

Figure 13. Collector Saturation Region

-2.6

-3.0

-0.2

-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200

IC, COLLECTOR CURRENT (mA)

Figure 14. Base−Emitter Temperature Coefficient

http://onsemi.com

6

Share Link: