BC846BPDW1 查看數據表（PDF） - ON Semiconductor
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BC846BPDW1 Datasheet PDF : 17 Pages
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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CEO
−65
−45
−30
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CES
−80
−50
−30
Collector −Base Breakdown Voltage
(IC = −10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CBO
−80
−50
−30
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)EBO
−6.0
−6.0
−6.0
Collector Cutoff Current
(VCB = −30 V)
(VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
−
−
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
(IC = −2.0 mA, VCE = −5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
hFE
−
−
200
420
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA) All devices except SBC847BPDW1T1G
SBC847BPDW1T1G only
(IC = −100 mA, IB = −5.0 mA) All devices
(IC = −2 mA, IB = −0.5 mA) SBC847BPDW1T1G only
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
SMALL− SIGNAL CHARACTERISTICS
VCE(sat)
VBE(sat)
VBE(on)
−
−
−
−
−
−
−0.6
−
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
fT
100
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cob
−
Noise Figure
NF
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
−
Typ
Max
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−15
−
−4.0
150
270
290
520
−
−
−
−0.024
−0.7
−0.9
−
−
−
−
475
800
−0.3
−0.1
−0.65
−
−
−
−0.75
−0.82
−
−
−
4.5
−
10
Unit
V
V
V
V
nA
mA
−
V
V
V
MHz
pF
dB
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