BAS21SLT1G(2004) 查看數據表（PDF） - ON Semiconductor
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BAS21SLT1G Datasheet PDF : 4 Pages
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BAS21SLT1
Preferred Device
Dual Series High Voltage
Switching Diode
Features
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: Class 1
ESD Rating − Machine Model: Class B
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Continuous Reverse Voltage
VR
250
Repetitive Peak Reverse Voltage
VRRM
250
Peak Forward Current
IF
225
Peak Forward Surge Current
IFM(surge)
625
THERMAL CHARACTERISTICS
Vdc
Vdc
mAdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
PD
225
mW
(Note 1)
TA = 25°C
Derate above 25°C
1.8
mW/°C
Thermal Resistance,
Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
Junction to Ambient
RqJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
°C
+150
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
ANODE
1
CATHODE
2
3
CATHODE/ANODE
3
1
2
SOT−23
CASE 318
STYLE 11
MARKING DIAGRAM
JT M
JT = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BAS21SLT1
SOT−23 3000/Tape & Reel
BAS21SLT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
May, 2004 − Rev. 4
Publication Order Number:
BAS21SLT1/D
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