NTE633 查看數據表（PDF） - NTE Electronics

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NTE633

Silicon Rectifier Diode High Speed Switching (Surface Mount)

NTE Electronics 

Electrical Characteristics (Cont’d): (TJ = +25°C, unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Reverse Current

Diode Capacitance

Reverse Recovery Time

Forward Recovery Voltage

IR VR = 25V

−

TJ = +150°C

−

VR = 75V

−

TJ = +150°C

−

Cd f = 1MHz, VR = 0

−

trr When switched from IF = 10mA to IR = 10mA, −

RL = 100Ω, measured at IR = 1mA

Vfr When switched from IF = 10mA, tr = 20ns

−

− 30 nA

− 30 µA

−

1 µA

− 50 µA

− 1.5 pF

−

4 ns

− 1.75 V

.037

(0.95)

K

.049

(1.25)

.098 (2.5)

.066 (1.7)

A

.011 (0.3)

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