NX26F011A 查看數據表（PDF） - Unspecified
零件编号
产品描述 (功能)
生产厂家
NX26F011A Datasheet PDF : 14 Pages
| |||
NX26F011A
NX26F041A
Start Sector Read Routine
Output clock (low to high) to
wake device from standby
Output Command Sequence:
-Read command C3-C0 (0001B)
-Main Sector Address A1-A0
(000-1FF-7FF)
-Device Address DA3-DA0
(per state of A3, A2, A1, A0 pins)
-Auxilary Address A15-A12
0H for main array
5H device information sector
-Four reserved bytes R31-R0
(00 00 00 00H)
Input Ready/Busy Status S15-S0.
Note tRP delay time is
required during status read
(See AC Timing and Figure 10)
Ready?
(99 99H)
No*
Yes
Input first byte of data
(Tag/Sync) from sector
Valid Sector?
(C9H)
No*
Yes
Return to write routine?
No
Input remaining 264 bytes of
sector data (2112 bits)
Yes*
*Set Flag and process
accordingly upon return
Assert CLK low for tRESET to
reset device and invoke standby
Return
Start Sector Erase/Write Routine
Call Read Sector Routine to
check Ready/Busy and Tag
Device
Ready and Sector
Tag valid
No*
Yes
Output one clock to wake
device from stand-by
Output Command Sequence:
-Read command C3-C0 (0001B)
-Main Sector Address A1-A0
(000-1FF-7FF)
-Device Address DA3-DA0
(per state of A3, A2, A1, A0 pins)
-Auxilary Address A15-A12
0H for main array
-Four reserved bytes R31-R0
(00 00 00 00H)
Output (Rewrite )1st byte of sector
with C9H Tag/Sync bite
Output remaining 264 bytes
(2112 bits) of sector data
Output two bytes of zeros (00 00H)
Assert CLK low for tRESET
to invoke Erase/Write Operation
and then standby operation
*Set Flag and process
accordingly upon return
Return (1)
1
2
3
4
5
6
7
8
9
10
11
12
Figure 7. Sector Read Operation Flow Chart
Figure 8. Sector Erase/Write Operation Flow Chart
Note:
1. To ensure higher data integrity verify each sector write with a sector read. See High Data Integrity Applications on Page 4.
NexFlash Technologies, Inc.
7
PRELIMINARY NXSF009A-0599
05/05/99 ©
Share Link: 